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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD240/A/B/C
DESCRIPTION *With TO-220C package *Complement to type BD239/A/B/C APPLICATIONS *For medium power linear and switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER BD240 VCBO Collector-base voltage BD240A BD240B BD240C BD240 VCEO Collector-emitter voltage BD240A BD240B BD240C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -2 -4 -0.6 30 150 -65~150 V A A A W V V UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD240/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BD240 BD240A IC=-30mA; IB=0 BD240B BD240C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD240/A ICEO Collector cut-off current BD240B/C BD240 BD240A ICES Collector cut-off current BD240B BD240C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; VCE=-4V 40 15 -1 mA VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 mA IC=-1 A;IB=-0.2 A IC=-1A ; VCE=-4V VCE=-30V; IB=0 -0.3 mA -80 -100 -0.7 -1.3 V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD240/A/B/C
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3

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